Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
Identifieur interne : 000193 ( Chine/Analysis ); précédent : 000192; suivant : 000194Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
Auteurs : RBID : Pascal:13-0331112Descripteurs français
- Pascal (Inist)
- Cuivre, Indium, Gallium, Séléniure, Mécanisme croissance, Précurseur, Couche mince, Croissance film, Température recuit, Recuit thermique, Dépendance température, Pulvérisation irradiation, Morphologie surface, Champ intense, Emission champ, Microscopie électronique balayage, Diffraction RX, Structure cristalline, Spectrométrie Raman, Thrombocyte, Croissance grain, Cristal hexagonal, Dépôt physique phase vapeur, Composé minéral, Composé de l'indium, Cellule solaire, Cu2-xSe, CuInSe2, 8110A, 8115C, 7970, 6166.
- Wicri :
- concept : Cuivre, Composé minéral.
English descriptors
- KwdEn :
- Annealing temperature, Blood platelets, Copper, Crystal structure, Field emission, Film growth, Gallium, Grain growth, Growth mechanism, Hexagonal crystals, High field, Indium, Indium compounds, Inorganic compounds, Physical vapor deposition, Precursor, Raman spectroscopy, Scanning electron microscopy, Selenides, Solar cells, Sputtering, Surface morphology, Temperature dependence, Thermal annealing, Thin films, XRD.
Abstract
We report a study of copper indium gallium selenide (CIGS) thin film growth in the annealing process at temperature range from 120 °C to 600 °C. Thin films were prepared by sputtering metal precursors and subsequent selenization process. Surface morphologies of thin films were observed by using high resolution field emission scanning electron microscopy (FESEM). Phases in quaternary systems Cu-In- Ga-Se were investigated by X-ray diffraction (XRD). Evolution of crystalline structure in the film surface was studied by Raman spectra. A possible reaction path from metallic precursors to a single CIGS phase was obtained by merging all results of SEM, XRD and Raman. Above 210 °C, selenium reacted with Cu and In to form binary selenide. CuSe crystalline platelets were observed clearly in the film surfaces. When temperature was reaching 380 °C, Cu2-xSe and InSe reacted with excess Se to form CuInSe2 (CIS) and contributed to the grain growth. Above 410 °C, Ga-rich phase was detected in the films. With increased temperature, Ga diffused into CIS crystalline lattices. Finally, at 600 °C, a single phase of Cu-In-Ga-Se quaternary system was formed. A large number of triangular and hexagonal structures were observed in the film due to a re-crystalline process at a high annealing temperature.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of copper indium gallium selenide material growth by selenization of metallic precursors</title><author><name>JUNFENG HAN</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>CHENG LIAO</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Chengdu Green Energy and Green Manufacturing Technology R&D Center</s1><s2>Chengdu, Sichuan 601207</s2><s3>CHN</s3><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Chengdu Green Energy and Green Manufacturing Technology R&D Center</wicri:noRegion></affiliation></author><author><name>TAO JIANG</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>HUAMU XIE</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name>KUI ZHAO</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Besland, M P" uniqKey="Besland M">M.-P. Besland</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0331112</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0331112 INIST</idno><idno type="RBID">Pascal:13-0331112</idno><idno type="wicri:Area/Main/Corpus">000629</idno><idno type="wicri:Area/Main/Repository">000998</idno><idno type="wicri:Area/Chine/Extraction">000193</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing temperature</term><term>Blood platelets</term><term>Copper</term><term>Crystal structure</term><term>Field emission</term><term>Film growth</term><term>Gallium</term><term>Grain growth</term><term>Growth mechanism</term><term>Hexagonal crystals</term><term>High field</term><term>Indium</term><term>Indium compounds</term><term>Inorganic compounds</term><term>Physical vapor deposition</term><term>Precursor</term><term>Raman spectroscopy</term><term>Scanning electron microscopy</term><term>Selenides</term><term>Solar cells</term><term>Sputtering</term><term>Surface morphology</term><term>Temperature dependence</term><term>Thermal annealing</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cuivre</term><term>Indium</term><term>Gallium</term><term>Séléniure</term><term>Mécanisme croissance</term><term>Précurseur</term><term>Couche mince</term><term>Croissance film</term><term>Température recuit</term><term>Recuit thermique</term><term>Dépendance température</term><term>Pulvérisation irradiation</term><term>Morphologie surface</term><term>Champ intense</term><term>Emission champ</term><term>Microscopie électronique balayage</term><term>Diffraction RX</term><term>Structure cristalline</term><term>Spectrométrie Raman</term><term>Thrombocyte</term><term>Croissance grain</term><term>Cristal hexagonal</term><term>Dépôt physique phase vapeur</term><term>Composé minéral</term><term>Composé de l'indium</term><term>Cellule solaire</term><term>Cu2-xSe</term><term>CuInSe2</term><term>8110A</term><term>8115C</term><term>7970</term><term>6166</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a study of copper indium gallium selenide (CIGS) thin film growth in the annealing process at temperature range from 120 °C to 600 °C. Thin films were prepared by sputtering metal precursors and subsequent selenization process. Surface morphologies of thin films were observed by using high resolution field emission scanning electron microscopy (FESEM). Phases in quaternary systems Cu-In- Ga-Se were investigated by X-ray diffraction (XRD). Evolution of crystalline structure in the film surface was studied by Raman spectra. A possible reaction path from metallic precursors to a single CIGS phase was obtained by merging all results of SEM, XRD and Raman. Above 210 °C, selenium reacted with Cu and In to form binary selenide. CuSe crystalline platelets were observed clearly in the film surfaces. When temperature was reaching 380 °C, Cu<sub>2-x</sub>Se and InSe reacted with excess Se to form CuInSe<sub>2</sub> (CIS) and contributed to the grain growth. Above 410 °C, Ga-rich phase was detected in the films. With increased temperature, Ga diffused into CIS crystalline lattices. Finally, at 600 °C, a single phase of Cu-In-Ga-Se quaternary system was formed. A large number of triangular and hexagonal structures were observed in the film due to a re-crystalline process at a high annealing temperature.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>382</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of copper indium gallium selenide material growth by selenization of metallic precursors</s1></fA08><fA11 i1="01" i2="1"><s1>JUNFENG HAN</s1></fA11><fA11 i1="02" i2="1"><s1>CHENG LIAO</s1></fA11><fA11 i1="03" i2="1"><s1>TAO JIANG</s1></fA11><fA11 i1="04" i2="1"><s1>HUAMU XIE</s1></fA11><fA11 i1="05" i2="1"><s1>KUI ZHAO</s1></fA11><fA11 i1="06" i2="1"><s1>BESLAND (M.-P.)</s1></fA11><fA14 i1="01"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Chengdu Green Energy and Green Manufacturing Technology R&D Center</s1><s2>Chengdu, Sichuan 601207</s2><s3>CHN</s3><sZ>2 aut.</sZ></fA14><fA20><s1>56-60</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000504207520110</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>29 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0331112</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a study of copper indium gallium selenide (CIGS) thin film growth in the annealing process at temperature range from 120 °C to 600 °C. Thin films were prepared by sputtering metal precursors and subsequent selenization process. Surface morphologies of thin films were observed by using high resolution field emission scanning electron microscopy (FESEM). Phases in quaternary systems Cu-In- Ga-Se were investigated by X-ray diffraction (XRD). Evolution of crystalline structure in the film surface was studied by Raman spectra. A possible reaction path from metallic precursors to a single CIGS phase was obtained by merging all results of SEM, XRD and Raman. Above 210 °C, selenium reacted with Cu and In to form binary selenide. CuSe crystalline platelets were observed clearly in the film surfaces. When temperature was reaching 380 °C, Cu<sub>2-x</sub>Se and InSe reacted with excess Se to form CuInSe<sub>2</sub> (CIS) and contributed to the grain growth. Above 410 °C, Ga-rich phase was detected in the films. With increased temperature, Ga diffused into CIS crystalline lattices. Finally, at 600 °C, a single phase of Cu-In-Ga-Se quaternary system was formed. A large number of triangular and hexagonal structures were observed in the film due to a re-crystalline process at a high annealing temperature.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70I70</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A66</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Séléniure</s0><s2>NA</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Selenides</s0><s2>NA</s2><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Précurseur</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Precursor</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche mince</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Thin films</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Croissance film</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Film growth</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Température recuit</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Annealing temperature</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Temperatura recocido</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Dépendance température</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Sputtering</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface morphology</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Champ intense</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>High field</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Emission champ</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Field emission</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>XRD</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Crystal structure</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Spectrométrie Raman</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Raman spectroscopy</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Thrombocyte</s0><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Blood platelets</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Croissance grain</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Grain growth</s0><s5>35</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Cristal hexagonal</s0><s5>36</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Hexagonal crystals</s0><s5>36</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Cristal hexagonal</s0><s5>36</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0><s5>37</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Physical vapor deposition</s0><s5>37</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Composé minéral</s0><s5>38</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>38</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Composé de l'indium</s0><s5>39</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Indium compounds</s0><s5>39</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>40</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Solar cells</s0><s5>40</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Cu2-xSe</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>7970</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>6166</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>315</s1></fN21><fN44 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